A new level shifter in ultra deep sub-micron for low to wide range voltage applications

摘要

A level shifter aimed at ultra low core voltage and wide range I/O voltage is designed using a 90nm CMOS process. Proposed level shifter uses analog circuit techniques and zero-Vt transistor with no extra process step, no static power and stable duty ratio make this level shifter suitable for ultra low core voltage and wide range I/O voltage applications. These techniques work even 0.6V core voltage, 1.65-3.6V I/O voltage within 45:55 duty ratio up to 200MHz.