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Development of infrared detector with slot antenna-coupled microbolometer

机译:缝隙天线耦合测微仪红外探测器的研制

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The current state-of-the-art infrared detection technology requires either exotic materials or cryogenic conditions to perform its duty. Implementing infrared detection by coupling infrared tuned antenna with a micro-bolometer offers a promising technological platform for mass production of un-cooled infrared detectors and imaging arrays. The design, fabrication, and characterization of a planar slotted antenna have been demonstrated on a thin silicon dioxide (SiO_2) membrane for infrared detection. The planar slotted antenna was chosen due to its ease of fabrication and greater fabrication tolerance, higher gain and greater bandwidth coveted for the infrared applications. The employment of the SiO_2 membrane technology mitigates the losses due to surface waves generated as the radiation coupling into the substrates. In addition, by retaining the membrane thickness to be less than a wavelength, the amount of interference is greatly reduced. A strategically designed planar slotted dipole antenna is implemented along with an integrated direct current (DC) block enabled by co-fabricated on-chip capacitors between the two DC patches to separate DC and high frequency signals without the need for sub-micron DC separation line. As a result of this revision, standard UV photolithography instead of e-beam lithography can be used to fabricate the infrared detectors for mass production. This research is considered as an important step toward our main goal, which is developing ultrafast infrared detector by coupling a planar slotted antenna with a metal insulator metal (MIM) tunneling diode.
机译:当前最先进的红外检测技术需要特殊的材料或低温条件来履行其职责。通过将红外调谐天线与微辐射热计耦合来实现红外检测,为大规模生产未冷却的红外检测器和成像阵列提供了一个有希望的技术平台。平面缝隙天线的设计,制造和特性已在用于红外检测的二氧化硅(SiO_2)薄膜上得到了证明。选择平面缝隙天线是因为其易于制造,具有更大的制造公差,更高的增益和更大的带宽,这些都是红外应用所渴望的。 SiO_2膜技术的使用减轻了由于辐射耦合到基底中时产生的表面波而造成的损耗。另外,通过将膜厚度保持为小于波长,可以大大减少干涉量。实施了战略性设计的平面缝隙偶极天线以及集成的直流(DC)模块,该模块由两个DC贴片之间的共同制造的片上电容器实现,以分离DC和高频信号,而无需亚微米DC分离线。作为此修订的结果,可以使用标准的UV光刻技术代替电子束光刻技术来制造用于大量生产的红外检测器。这项研究被认为是迈向我们主要目标的重要一步,该主要目标是通过将平面缝隙天线与金属绝缘体金属(MIM)隧穿二极管耦合来开发超快红外探测器。

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