Solution for PCM and OTS Intermixing on Cross-Point Phase Change Memory

机译：PCM和ITS混合在交叉点相变内存中的解决方案

获取原文

获取外文期刊封面目录资料

页面导航

摘要
著录项
引文网络
相似文献
相关主题

摘要

A reliability study for PCM and OTS intermixing was addressed. The buffer layer between PCM and OTS plays a key role in preventing PCM/OTS intermixing after BEOL processing thermal treatment. Besides cycling endurance, performance degradation due to interlayer intermixing was observed. Optimal device operation and an improved buffer layer allowed drastically improved cycling endurance from a few cycles to > 1E9 cycles.

机译：解决了PCM和ITS混合的可靠性研究。 PCM和OTS之间的缓冲层在防止BEOL处理热处理后的PCM / OTS混合中发挥着关键作用。除了循环耐久性外，观察到由于中间层混合引起的性能降解。最佳装置操作和改进的缓冲层允许从几个循环到> 1E9循环的循环急促改善循环耐久性。

著录项

来源
《IEEE International Memory Workshop》|2019年|234p|共4页
会议地点
作者
W.C. Chien; L.M. Gignac; N. Gong; C.W. Yeh; C.H. Yang; R.L. Bruce; H.Y. Cheng; J.M. Papalia; H. Miyazoe; C.W. Cheng; W. Kim; I.T. Kuo; F. Carta; A. Ray; E.K. Lai; M. BrightSky; H.L. Lung;
展开▼
作者单位

展开▼
会议组织
原文格式 PDF
正文语种
中图分类存贮器;
关键词
Phase change materials; Buffer layers; Video recording; Annealing; Phase change memory; Degradation; Threshold voltage;

机译：相变材料;缓冲层;视频记录;退火;相变记忆;劣化;阈值电压;

相似文献

外文文献
中文文献
专利

1. Surface-tensile-stress induced polishing- voids in cross-point phase-change-memory cells: corrosion mechanism and solution [J] . Kim Soo-Bum, Cui Hao, Cho Jong-Young, Semiconductor science and technology . 2019,第6期

机译：表面张力应力引起的交叉点相变存储单元中的抛光空隙：腐蚀机理和解决方案
2. Surface-tensile-stress induced polishing- voids in cross-point phase-change-memory cells: corrosion mechanism and solution [J] . Kim Soo-Bum, Cui Hao, Cho Jong-Young, Semiconductor science and technology . 2019,第6期

机译：表面拉伸应力诱导串联相变记忆机中的抛光 - 空隙：腐蚀机制和溶液
3. 3D cross-point phase-change memory for storage-class memory [J] . Cheng Huai-Yu, Carta Fabio, Chien Wei-Chih, Journal of Physics, D. Applied Physics: A Europhysics Journal . 2019,第47期

机译：用于存储类内存的3D交叉点相位更改内存
4. Solution for PCM and OTS Intermixing on Cross-Point Phase Change Memory [C] . W.C. Chien, L.M. Gignac, N. Gong, IEEE International Memory Workshop . 2019

机译：交叉点相变存储器上PCM和OTS混合的解决方案
5. Improving Phase Change Memory (PCM) and Spin-Torque-Transfer Magnetic-RAM (STT-MRAM) as next-generation memories: A circuit perspective. [D] . Zhao, Bo. 2013

机译：改进相变存储器（PCM）和自旋扭矩传递磁性RAM（STT-MRAM）作为下一代存储器：电路角度。
6. Unsupervised Learning by Spike Timing Dependent Plasticity in Phase Change Memory (PCM) Synapses [O] . Stefano Ambrogio, Nicola Ciocchini, Mario Laudato, 2016

机译：在相变记忆（PCM）突触中通过尖峰时序相关可塑性进行无监督学习
7. Improving Phase Change Memory (PCM) and Spin-Torque-Transfer Magnetic-RAM (STT-MRAM) as Next-Generation Memories: A Circuit Perspective [O] . Zhao Bo 2014

机译：改进相变存储器（PCM）和自旋扭矩传递磁性RAM（STT-MRAM）作为下一代存储器：电路角度

Solution for PCM and OTS Intermixing on Cross-Point Phase Change Memory

摘要

著录项

引文网络

相似文献

相关主题

期刊订阅