Design of TAS-MRAM prototype for NV embedded memory applications

摘要

In this paper, we present a new design of TAS-MRAM, which is dedicated for the embedded applications. The Thermally Assisted Switching (TAS) approach allows the low power memory programming and Pre-Charge Sense Amplifiers (PCSA) enable the reliable, high speed and low power sensing. By using a TAS-MTJ spice model integrating the precise experimental parameters and CMOS 130nm technology, simulations have been done to demonstrate the expected performances; a 128Kb prototype has been developed to validate experimentally the new design by means of standard cell and automatic macro generation techniques.