A 1.0V power supply, 9.5GByte/sec write speed, Single-Cell Self-Boost program scheme for Ferroelectric NAND Flash SSD

摘要

A Single-Cell Self-Boost (SCSB) program scheme is proposed to achieve a 1.0V power supply operation in Ferroelectric (Fe-) NAND flash memories. In the proposed SCSB scheme, only the channel voltage of the cell to which the program voltage VPGM is applied is self-boosted in the program-inhibit NAND string. The proposed program scheme shows an excellent tolerance to the program disturb at the power supply voltage, VCC=1.0V. The power consumption of the Fe-NAND at VCC=1.0V decreases by 86% compared with the conventional floating gate (FG-) NAND at VCC=1.8V without degrading the write speed. The number of NAND chips written simultaneously in Solid-State Drives (SSD) increases by 6.9 times. As a result, the 9.5GByte/sec write throughput of the Fe-NAND SSD is achieved for an enterprise application.