Silicon quantum dots in an oxide matrix for third generation photovoltaic solar cells

摘要

The implementation of quantum dots in third generation solar cells will be of importance to enhance current transport mechanisms and quantum tunneling effects. In this study, it was demonstrated that silicon quantum dots with diameters of 3‼8 nm in an oxide matrix were successfully fabricated. The quantum dots were produced by depositing an amorphous oxide matrix with a SiO target followed by annealing at different high temperatures. The morphological features of the oxide matrix were characterized. The optical properties were performed by Raman spectroscopy and photoluminescence spectrum respectively to confirm the effects of quantum dots. Reflectance spectrum displayed strong light absorption with wavelength higher than 550nm by the Si quantum dots, and XRD results demonstrated the crystallization phenomenon in the oxide matrix.