Hydrogenated amorphous silicon (a-Si:H) has been the subject of considerable studies in the past 30 years, due to its growing application in large area optoelectronic devices, and especially in solar cells (see, for instance, [1–2]). In particular, the microscopic details of disordering, hydrogen migration and bonding within the amorphous silicon network are crucial for the understanding of a-Si:H, including the detrimental Staebler-Wronski (SW) effect [3], and for the improvement of the overall quality of the material.
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