Broadband resistive-inductive compensated GaN-HEMT single-FET switch

摘要

In this contribution an analytical approach to the design of constant-isolation microwave resistive-inductive compensated switch operating from DC to 30GHz is presented. Simulated and measured performance of a GaN HEMT single-FET switch cell topology and that of a complete SPDT using the proposed methodology are presented to demonstrate the approach feasibility and effectiveness. The single-FET switch is featured by an isolation of 5.4±0.5dB over the DC-30GHz band. The resulting SPDT, operating over 2–18GHz band, is featured by 2.7dB insertion loss and isolation better than 25dB all over the operating bandwidth.