The investigations reported in this paper constitute three solutions for enhancement of KTa1-xNbxO3 (KTN) ferroelectric material performances displayed by microwave tunable devices. Quasi-epitaxial KTN films with strongly improved microwave performances (especially tunability) were grown on R-sapphire substrates through the use of KNbO3 seed layers. Doping of the KTN layer with two different compounds through either Ti substitution or MgO addition led to a significant reduction of the KTN dielectric losses. This study deals also with the influence of the microwave characteristics upon the KTN-based tunable devices through comparison of Chemical Solution- and Pulsed Laser-Depositions.
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机译：本文报道的研究为提高微波显示的KTa 1-x Nb x O 3 （KTN）铁电材料性能提供了三种解决方案可调设备。通过使用KNbO 3 种子层，在R-蓝宝石衬底上生长了具有显着改善的微波性能（尤其是可调性）的准外延KTN薄膜。通过Ti替代或MgO添加两种不同的化合物对KTN层进行掺杂，可以显着降低KTN介电损耗。这项研究还通过比较化学溶液沉积和脉冲激光沉积，研究了微波特性对基于KTN的可调设备的影响。
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