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Anti-guiding in implant-defined vertical-cavity surface-emitting laser arrays

机译:植入物定义的垂直腔面发射激光器阵列中的反导

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Arrays of vertical-cavity surface-emitting lasers have been investigated as potential high-power, single-mode sources. Proton-implantation definition of laser apertures has been demonstrated as a simple and effective method to create coherently coupled vertical-cavity surface-emitting laser (VCSEL) arrays [1, 2]. In this work, the thermal and carrier characteristics of these arrays are considered and the coupling mechanism is described. As has been observed in edge emitters, it is demonstrated that the coupling between implant apertures is a result of index anti-guiding [3]. This reveals that it is possible to make strongly coupled anti-guided VCSEL arrays without many of the complicated fabrication processes previously required [4–6]. The behavior of these laser arrays is described theoretically and compared to experiment.
机译:垂直腔表面发射激光器的阵列已被研究为潜在的高功率,单模光源。激光孔径的质子注入定义已被证明是一种简单有效的方法来创建相干耦合的垂直腔面发射激光器(VCSEL)阵列[1、2]。在这项工作中,考虑了这些阵列的热和载流子特性,并描述了耦合机制。正如在边缘发射器中观察到的,已证明植入物孔之间的耦合是折射率反导的结果[3]。这表明可以制造出强耦合的反导VCSEL阵列,而无需先前需要的许多复杂的制造工艺[4-6]。理论上描述了这些激光器阵列的行为,并与实验进行了比较。

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