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Influence of nitrogen pressure on silicon content in Ti-Si-N coatings deposited by the vacuum-arc method

机译:氮气压力对真空电弧沉积Ti-Si-N涂层中硅含量的影响

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Influence of nitrogen pressure on silicon content in Ti-Si-N coatings deposited by the va?uum-arc method using Ti0,96–Si0,04 alloy as a consumable cathode materialwas was investigated. It is found out, that the silicon content in coatings regardless of deposition conditions is lower than in the cathode. In pressure range from 5·10−4 to 10−3 Torr, film has minimal silicon content (∼ 0.4 wt. %) and maximal hardness (35 GPa). It is supposed, that the extremum character of coating silicon concentration and hardness dependencies on nitrogen pressure is a result of distinction of structure-phase composition of the coatings obtained at different pressure.
机译:氮气压力对以Ti 0.96 -Si 0.0 合金为容器的真空电弧沉积Ti-Si-N涂层中硅含量的影响研究了消耗性阴极材料。已经发现,不管沉积条件如何,涂层中的硅含量都低于阴极中的硅含量。在从5·10 -4 到10 -3 Torr的压力范围内,薄膜的硅含量最低(〜0.4 wt。%),而硬度最高(35 GPa)。可以认为,涂层硅浓度的极值特性和硬度对氮气压力的依赖性是区别在不同压力下获得的涂层的结构相组成的结果。

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