A 10 GHz cut-off frequency transistor based on epitaxial graphene nano ribbon

摘要

High frequency characterization of epitaxial-grown graphene nano ribbon based field-effect transistor (GNRFET) was investigated. The few layers graphene were synthesized by thermal decomposition of Si-faced silicon carbide. The intrinsic current gain cut-off frequency of 10 GHz was obtained. A small signal equivalent circuit model of this device was proposed which open a potentiality to the modelling of GNR based HF electronics.