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A 10Gb/s Burst-Mode Laser Diode Driver for IEEE 802.3av 10G-EPON Applications

机译:适用于IEEE 802.3av 10G-EPON应用的10Gb / s突发模式激光二极管驱动器

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The IEEE standards board has announced the approval of the 10G-EPON standard, IEEE Std. 802.3av. In this paper, a 10Gb/s burst-mode laser diode driver for the symmetric-rate 10G-EPON ONU applications is described. It is designed with a low-cost 0.18¿m CMOS process. Post-simulation results that it has a speed of 10.3125Gb/s, and is able to provide up to 35mA modulation current under a 1.8V power supply. The burst turn-on/-off delays are both less than 1ns. The dimension of the laser diode driver is 575¿m × 675¿m.
机译:IEEE标准委员会已宣布批准10G-EPON标准IEEE Std。 802.3av。本文介绍了一种用于对称速率10G-EPON ONU应用的10Gb / s突发模式激光二极管驱动器。它采用低成本的0.18μmCMOS工艺进行设计。仿真后的结果表明它具有10.3125Gb / s的速度,并且能够在1.8V电源下提供高达35mA的调制电流。突发开启/关闭延迟均小于1ns。激光二极管驱动器的尺寸为575μm×675μm。

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