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Analysis of grain-boundary in SrCoO_3-doped ZnO varistors and its electrical characteristics

机译:SRCOO_3掺杂ZnO压敏电阻中晶界分析及其电气特性

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The grain-boundary and its electrical characteristics in SrCoO_3-doped ZnO varistors were studied. The grain-boundary around ZnO-grain is probably composed of SrCoO_3, and its electrical behavior is clearly different from two conventional types of Bi-and Pr-based ZnO varitors. The non-linearity and characteristic behavior could be explained by considering the n-p-n hetero-structure at the grain boundary. SrCoO_3 in the grain-boundary region should play crucial roles of not only the appearance of non-liner property but also the formation of different hetero-structure from double Schottky-barrier model on conventional varistors.
机译:研究了SRCOO_3掺杂ZnO变阻器中的晶界及其电学特性。 ZnO晶粒周围的晶界可能由SRCOO_3组成,其电学行为与两种传统类型的双和PR基ZnO变压器显然不同。可以通过考虑晶界处的N-P-N异质结构来解释非线性和特征行为。晶粒边界区域的SrcoO_3不仅应起到非衬垫性质的外观,而且还可以在传统变阻器上从双肖特基屏障模型中形成不同的异质结构的形成。

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