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Effect of a Boron Additive on the Microstructure and Dielectric Properties of BaTiO_3 Thin Films Formed by Nanocrystal Deposition

机译:硼添加剂对通过纳米晶体沉积形成的BATIO_3薄膜微观结构和介电性能的影响

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Highly crystallized BaTiO_3 thin films were fabricated by a nanocrystal sintering process. Boron alkoxide was introduced into a slurry of Mn-doped BaTiO_3 nanocrystals with particle sizes of 5-7 nm. The deposited nanocrystal film on a (111)-oriented Pt/TiO_2/Al_2O_3 substrate was sintered at a low temperature of 800 °C and the obtained film had highly densified and oriented microstructures. We found that the boron additive enhanced the grain growth of nanoparticles and as a result the dielectric constant of the thin film increased to 1100 at 10 kHz, which is much higher than that of undoped BaTiO_3 thin films.
机译:通过纳米晶体烧结过程制造高度结晶的BATIO_3薄膜。将硼醇盐引入Mn掺杂的BATIO_3纳米晶体中,颗粒尺寸为5-7nm。在800℃的低温下烧结沉积的纳米晶体膜(111) - orientedPt / TiO_2 / Al_2O_3底物,得到的薄膜具有高度致密的和定向的微观结构。我们发现硼添加剂增强了纳米颗粒的晶粒生长,结果薄膜的介电常数在10kHz下增加到1100,这远高于未掺杂的BATIO_3薄膜。

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