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Effects of fine size lead-free solder ball on the interfacial reactions and joint reliability

机译:超细无铅锡球对界面反应和接头可靠性的影响

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To satisfy the requirements of the newest mobile product, smaller solder ball is needed for electronic packages such as chip scale package (CSP). The purpose of this study was to investigate the effect of solder ball size on the interfacial reaction. In this study, 400, 300, and, 200 ¿m diameter solder balls of 98.5 wt.% Sn, 1 wt.% Ag, and 0.5 wt.% Cu(SAC105) were formed on the Cu/OSP and electroplated Ni/Au pads at 250°C. In the case of the reaction with Cu/OSP, as solder ball size decreased, the thickness of Cu6Sn5 intermetallic compounds (IMCs) increased and Cu concentrations of solder balls increased. In the case of fine solder ball, Cu dissolution rate into molten solder was faster than large solder ball due to its high pad area/solder volume ratio (A/V ratio). Fast Cu dissolution into molten solder promoted the IMC growth. In the case of the reaction with electroplated Ni/Au, (Cu,Ni)6Sn5 IMCs were only formed in the interface of 400 ¿m solder ball. Both (Cu,Ni)6Sn5 and (Ni,Cu)3Sn4 IMCs were formed at the interface of 300 ¿m solder ball. (Ni,Cu)3Sn4 IMCs were only formed at the interface of 200 ¿m solder ball. The absolute Cu contents of 200 ¿m solder ball was smaller than 300 and 400 ¿m solder ball due to its smaller volume. (Ni,Cu)3Sn4 IMCs were formed by the insufficient Cu contents in 200 ¿m solder ball. The substrate design with smaller A/V ratio and the SAC alloy with higher Cu contents (>0.5 wt.%) were recommended to reduce the IMC growth.
机译:为了满足最新移动产品的要求,对于电子封装(例如芯片级封装(CSP)),需要较小的焊球。这项研究的目的是研究焊球尺寸对界面反应的影响。在这项研究中,在Cu / OSP上形成直径为98.5 wt%的锡,1 wt%的Ag和0.5 wt。%的Cu(SAC105)的直径为400、300和200的锡球,并进行了电镀Ni / Au垫在250°C时。在与Cu / OSP反应的情况下,随着焊球尺寸的减小,Cu 6 Sn 5 金属间化合物(IMC)的厚度增加,焊球中的Cu浓度增加增加。在细焊球的情况下,由于其高的焊盘面积/焊锡体积比(A / V比),Cu在熔融焊锡中的溶解速度比大焊球要快。快速的铜溶解到熔融焊料中促进了IMC的增长。在与电镀Ni / Au反应的情况下,(Cu,Ni) 6 Sn 5 IMC仅在400°m焊球的界面上形成。 (Cu,Ni) 6 Sn 5 和(Ni,Cu) 3 Sn 4 IMC均在300微米焊球的接口。 (Ni,Cu) 3 Sn 4 IMC仅在200μm焊球的界面处形成。由于其体积较小,所以200 µm焊球的绝对Cu含量小于300和400 µm焊球。 (Ni,Cu) 3 Sn 4 IMC是由200μm焊球中的铜含量不足所形成的。建议使用具有较小A / V比的基板设计和具有较高Cu含量(> 0.5 wt。%)的SAC合金来减少IMC的生长。

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