REBULF technology for bulk silicon and SOI lateral high-voltage devices

摘要

Reduced Bulk Field (REBULF) technology is used in the design of lateral power devices to improve breakdown voltage.Since this technology was firstly presented in 2006,this technology has gained widespread attention amongst researchers and has shown to offer good performance in a variety of application domains,especially in bulk silicon and SOI. This paper aims to offer a compendious and timely review of the technology and some work of our lab on the application of this technology in bulk silicon and SOI.