首页> 外文会议>Computer Architecture, 2008. ISCA '08 >Trading off Cache Capacity for Reliability to Enable Low Voltage Operation
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Trading off Cache Capacity for Reliability to Enable Low Voltage Operation

机译:权衡高速缓存容量以确保实现低压操作的可靠性

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One of the most effective techniques to reduce a processor's power consumption is to reduce supply voltage. However, reducing voltage in the context of manufacturing-induced parameter variations cancause many types of memory circuits to fail. As a result, voltage scaling is limited by a minimum voltage, often called Vccmin, beyond which circuits may not operate reliably. Large memory structures (e.g., caches) typically set Vccmin for the whole processor. In this paper, we propose two architectural techniques that enable microprocessor caches (L1and L2), to operate at low voltages despite very high memory cell failure rates. The Word-disable scheme combines two consecutive cache lines, to form a single cache line where only non-failing words are used. The Bit-fix scheme uses a quarter of the ways in a cache set to store positions and fix bits for failing bits in other ways of the set. During high voltage operation, both schemes allow use of the entire cache. During low voltage operation, they sacrifice cache capacity by 50% and 25%, respectively, to reduce Vccmin below 500mV. Compared to current designs with a Vccmin of 825mV, our schemes enable a 40% voltage reduction, which reduces power by 85% and energy per instruction (EPI) by 53%
机译:降低处理器功耗最有效的技术之一就是降低电源电压。然而,在制造引起的参数变化的情况下降低电压会导致许多类型的存储电路发生故障。结果,电压缩放受到通常称为Vccmin的最小电压的限制,超过该最小电压,电路可能无法可靠地工作。大的存储器结构(例如,高速缓存)通常为整个处理器设置Vccmin。在本文中,我们提出了两种架构技术,这些技术可使微处理器高速缓存(L1和L2)在非常高的存储单元故障率下仍能在低电压下运行。禁用字的方案结合了两个连续的高速缓存行,以形成仅使用非失败字的单个高速缓存行。位修复方案使用高速缓存集中的四分之一的方式来存储位置,并以其他方式修复失败位的位。在高压操作期间,两种方案都允许使用整个高速缓存。在低电压操作期间,它们分别牺牲了50%和25%的高速缓存容量,以将Vccmin降低至500mV以下。与目前的Vccmin为825mV的设计相比,我们的方案可将电压降低40%,从而将功耗降低85%,将每条指令的能量(EPI)降低53%

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