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Pure-silica-zeolite low-k dielectric films for computer chips

机译:用于计算机芯片的纯硅沸石低k介电膜

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Porous silicas are promising candidates to replace dense silica for use as low dielectric constant (low-k) insulators in microprocessors. With amorphous porous silicas, the mechanical strength deteriorates rapidly with increasing porosity and creates significant concerns over the reliability of these materials under mechanical stresses imposed during the chemical mechanical polishing (CMP) and packaging processes. In this presentation, we summarize our recent works that show experimentally that pure-silica-zeolites (PSZs) have a remarkably higher mechanical strength than amorphous porous silicas at any given porosity or k value due to their crystalline structure, making them a likely dielectric material for enabling smaller feature sizes in future generation microprocessors.
机译:多孔二氧化硅有望替代致密二氧化硅,以用作微处理器中的低介电常数(low-k)绝缘体。对于无定形多孔二氧化硅,机械强度会随着孔隙率的增加而迅速降低,并在化学机械抛光(CMP)和包装过程中施加的机械应力下引起对这些材料可靠性的极大关注。在此演示文稿中,我们总结了我们最近的工作,这些工作通过实验表明,在任何给定的孔隙率或k值下,纯硅沸石(PSZ)由于其晶体结构而具有比无定形多孔硅石显着更高的机械强度,这使其成为可能的介电材料用于在下一代微处理器中实现更小的功能。

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