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STABILITY OF Al:ZnO THIN FILMS PREPARED BY DC AND MF SPUTTERING PROCESSES TO THE DAMP-HEAT TEST CONDITIONS

机译:DC和MF溅射工艺制备的Al:ZnO薄膜在潮湿试验条件下的稳定性

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Polycrystalline AZO thin films with preferential texture in the (002) direction, electrical resistivitybelow 2 mΩcm and visible optical transmission above 85 % have been prepared by both DC and MF sputtering fromceramic oxide target in argon atmosphere. The input power was varied between 600 and 1500 W, that allowed torange the growth rate between 50 and 130 nm/min, whereas the deposition time was adjusted accordingly to obtain~2.0 μm thick layers at the different powers and modes. The evolution of the AZO film optical and electricalcharacteristics after exposure to damp heat environment (85 °C and 85 % relative humidity) has been analyzed as afunction of the treatment time for the layers prepared at the different sputtering conditions. After more than 1000 h ofdamp heat exposition, the analyzed samples showed an increase in the electrical resistance ~15-20 % of the initialvalue. No degradation of the optical transmittance has been detected except for the layers prepared at the highestpower values in continuous DC mode. Such layers showed the strongest (002) texture and became milky and rougherafter the damp heat treatment.
机译:在(002)方向上具有优先纹理的多晶AZO薄膜,电阻率 通过DC和MF溅射制备了低于2mΩcm的薄膜和高于85%的可见光透射 氩气氛中的陶瓷氧化物靶。输入功率在600至1500 W之间变化,允许 范围在50至130 nm / min之间的生长速率,而沉积时间相应地进行调整以获得 在不同的功率和模式下,厚度约为2.0μm。光学和电气AZO膜的演变 暴露于潮湿热环境(85°C和85%相对湿度)后的特性已被分析为 在不同溅射条件下制备的层的处理时间的函数。经过1000多个小时 湿热暴露,分析样品的电阻增加了初始电阻的〜15-20% 价值。除了以最高层制备的层之外,未检测到光透射率的下降。 连续直流模式下的功率值。这样的层显示出最强的(002)质地,并且变得乳白色和粗糙 经过湿热处理。

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