HYDROGENATED SILICON ABSORBER LAYERS FOR THIN FILM SOLAR CELLS DEPOSITED FROM HYDROGEN DILUTED SILANE USING A LAYER-BY-LAYER APPROACH

摘要

A series of a-Si:H films has been deposited using rf-PECVD with varying hydrogen dilution of thesilane source gas. XRD, FTIR and Raman spectroscopy were used to evaluate the structural properties of the films. Anarrowing of the XRD first diffraction peak as well as a shift of the Raman TO peak frequency to higher wavenumbers indicates that the structural order of the films increases with hydrogen dilution. To be able to utilize theenhanced properties of a-Si:H deposited at high hydrogen dilution, the transition to the microcrystalline phase shouldbe avoided. It was demonstrated that the structural phase of the Si:H solar cell absorber layer can be manipulatedusing a layer-by-layer process, ensuring that it remains amorphous even at high hydrogen to silane dilution ratios.