A fully integrated floating power supply for high voltage technologies including n-epi biasing

摘要

This paper presents an integrated floating power supply solution for feeding data acquisition circuits in a current sensor chip realized in monolithic high voltage technology. The main feature of this supply is that the floating n-epi pocket it is realized in, is biased with a voltage lower than the maximum voltage value present in the pocket itself. Measurements performed on two test chips showed good agreement with simulation results. The test phase highlighted some problems in the supply circuit, but their causes have been understood and can probably be solved in the future implementation of the circuit.