Power trench MOSFETs with very low specific on-resistance for 25V applications

摘要

In this paper, we present an investigation into the benefits DUV lithography for the manufacturing of Trench MOSFETs and its impact on device performance. We discuss experimental results for devices with a pitch size down to 0.6μm fabricated with an unconventional implant topology and a simplified manufacturing scheme. The fabricated Trench MOSFETs are benchmarked against previously published Trench MOS technologies by de-embedding the parasitic substrate resistance, revealing a record-low specific on-resistance of 5.3mΩmm~2 at a breakdown voltage of 30V (V_(gs)=10V).