FinFET: the prospective multi-gate device for future SoC applications

摘要

This paper discusses the possibility of future large scale integration (LSI) of multi-gate device. FinFET is thought to be the most promising multi-gate device for LSI, because it easily realizes the self-aligned double-gate structure. At first, the feasibility of SRAM operation with FinFET in hp22 nm node is studied by simulation in terms of V_t fluctuation control. Next, it is demonstrated that FinFET on bulk Si substrate (bulk-FinFET) is a suitable candidate for cost-effective LSI manufacturing. The integration schemes of FinFET and planar FET on the same substrate are also developed for the fabrication of 128 Kbit SRAM ADM (Array Diagnostic Monitor). Finally, successful SRAM cell operation is demonstrated with FinFET of L_g - 20 nm. Therefore, FinFET integrated circuit can provide a unique solution for future low-power SoC.