A Newly Developed SWMP-CVD for Preparation ofNitrogen Doped Amorphous Carbon Thin Films

摘要

The nitrogenated amorphous carbon (a-C:N) films were grown on silicon substrates by a novel surface wave microwaveplasma chemical vapor deposition (SWMP-CVD) method. The structural and bonding properties of the as-grown andannealed a-C:N films were measured and compared. The Raman and FTIR spectroscopy measurements have shown that thestructural and composition of the films can be tuned by optimizing the annealing temperatures (AT). The change of structuraland bonding properties of SWMP-CVD grown a-C:N films at higher AT was attributed due to the fundamental changes in thebonding and band structure of the films.