Investigating of influence of cosmic rays on SEU on station 'MIR'

摘要

In that paper the reasons single event upset (SEU) of semiconductor memory cells by results of the experiments carry out on OC "Mir" were investigated. The rating of radiation of a space and a fluency of nucleus of cosmic rays (CR) inside station in view of probability of nuclear interaction in a material of protection are carry out. It is shown, that at predicting intensity of SEU of memory cells it is necessary to take into account complex influence of various factors of a Space.