首页> 外文会议>Pacific Rim International Conference on Advanced Materials and Processing(PRICM 5) pt.5 >Flux Growth and Dielectric Properties of Relaxor-Based Pb(In_(1/2)Nb_(1/2))O_3-PbTiO_3 Single Crystals
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Flux Growth and Dielectric Properties of Relaxor-Based Pb(In_(1/2)Nb_(1/2))O_3-PbTiO_3 Single Crystals

机译:弛豫基Pb(In_(1/2)Nb_(1/2))O_3-PbTiO_3单晶的通量生长和介电性能

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Relaxor-based piezoelectric single crystals of lead indium niobate-lead titanate (0.63Pb(In_(1/2)Nb_(1/2))-0.37PbTiO_3, abbreviated as PIN-PT), in the vicinity of the morphotropic phase boundary, were prepared by a flux method. The compositions of the flux, Pb_3O_4 or PbF_2, play different role in perovskite stability and phase development. Thus, pure perovskite PIN-PT single crystals with the size of 2~5 mm were obtained by using Pb_3O_4 flux as well as a small amount of B_2O_3 additive. The microstructure and the phase development of the as-grown single crystals were investigated by scanning electron microscopy and transmission electron microscopy and X-ray diffraction. Furthermore, the dielectric properties of the <100>-oriented PIN-PT single crystals were measured in the temperature range between 20°C and 400°C.
机译:铌酸铅-钛酸铅(0.63Pb(In_(1/2)Nb_(1/2))-0.37PbTiO_3,缩写为PIN-PT)的弛豫基压电单晶,用助熔剂法制备。助熔剂的成分Pb_3O_4或PbF_2在钙钛矿稳定性和相发展中起着不同的作用。因此,通过使用Pb_3O_4助熔剂和少量的B_2O_3添加剂,可以获得2〜5 mm的纯钙钛矿PIN-PT单晶。通过扫描电子显微镜和透射电子显微镜以及X射线衍射研究了所生长的单晶的微观结构和相发展。此外,在20℃至400℃的温度范围内测量了<100>取向的PIN-PT单晶的介电性能。

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