The structural and photoluminescence character of In As quantum dots grown on a combined InAIAs and GaAs strained buffer layer

摘要

The structural and photoluminescence (PL) properties of the InAs quantum dots (QDs) grown on a combined InAIAs and GaAs strained buffer layer have been investigated by AFM and PL measurements. The dependence of the critical thickness for the transition from 2D to 3D on the thickness of GaAs layer is demonstrated directly by RHEED. The effects of the introduced-InAlAs layer on the density and the aspect ratio of QDs have been discussed.