Evaluation of utilizing 0.18-μm PMOS transistors in a 2.4-GHz receiver

摘要

2.4-GHz PMOS low noise amplifiers (LNAs) fabricated in a 0.18-μm CMOS process have ∼16 dB transducer power gain and 3.5 dB noise figure (N.F.) at 5.4-mW power consumption, which is ∼3 dB lower and 1 dB higher than those of NMOS LNAs fabricated in the same process. PMOS LNAs have 6-8 dB higher IIP₃. 2.4-GHz PMOS mixers have 6-dB conversion gain and ∼ 8-dB double side band N.F. at 29-mW power consumption, The gain is ∼ 3 dB lower while the N.F. is slightly lower than those of NMOS mixers. PMOS mixers have about 5-9 dB lower flicker noise. These indicate the feasibility of using PMOS transistors for RF applications, to improve noise isolation without adding any process modifications and cost.