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V-band and W-band SiGe bipolar low-noise amplifiers and voltage-controlled oscillators

机译:V波段和W波段SiGe双极低噪声放大器和压控振荡器

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LNAs and VCOs operating between 50 and 86 GHz have been implemented using a 0.12-μm, 200-GHz SiGe bipolar technology. Unbalanced LNAs at 50, 60, and 77 GHz show ∼15 dB of gain, drawing 2, 6, and 8 mA from 1.8 V, respectively. The iCP1dB for the LNAs are from -17 to -20 dBm. The noise figure of the 60-GHz LNA is 4.5 dB. Balanced amplifiers composed of two parallel LNAs with branch-line couplers at the input, and output have also been demonstrated at 60 and 77 GHz, showing 14 and 12-dB gain, respectively. Differential Colpitts VCOs have been implemented at 53, 67, and 85 GHz. Phase noises at a 1-MHz offset are -100, -98, and -94 dBc/Hz, respectively, while tuning ranges are 3.7%, 3.1%, and 2.7%. Each VCO consumes roughly 25 mW, and provides -8 dBm output power to 100 Ω differential.
机译:已经使用0.12μm,200 GHz SiGe双极技术实现了工作在50至86 GHz之间的LNA和VCO。在50 GHz,60 GHz和77 GHz时,不平衡LNA的增益约为15 dB,分别从1.8 V汲取2 mA,6 mA和8 mA。 LNA的iCP 1dB 为-17至-20 dBm。 60 GHz LNA的噪声系数为4.5 dB。由两个并行LNA组成的平衡放大器在输入和输出处都有分支线耦合器,在60 GHz和77 GHz频率下也得到了演示,分别显示了14 dB和12 dB的增益。差分Colpitts VCO已在53 GHz,67 GHz和85 GHz上实现。偏移为1 MHz时的相位噪声分别为-100,-98和-94 dBc / Hz,而调谐范围为3.7%,3.1%和2.7%。每个VCO消耗大约25 mW的功率,并为100差分提供-8 dBm的输出功率。

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