CHARACTERISATION OF MBE GROWN GaAs BASED STRUCTURESFOR SOLAR CELLS

摘要

Paper deals with GaAs and AlGaAS p-I-n solar cell structures prepared with different structureand thickness of I-region. The structures with multiple quantum wells were prepared, too. The solar cellstructures, p-I-n GaAs (AlGaAs) 1 cm × 1 cm, were grown by MBE on monocrystalline GaAs substrate. Theinfluence of I-region on solar cells structures behaviour was investigated. In our work, we have investigatedthe behaviour of the model structures in the dark and under simulated sunlight in order to get informationabout the optimal structure which can be efficiently used in solar cells. The properties of the prepared sampleswere measured in the dark at different temperatures in the range from 25 °C to 100 °C (current-voltagecharacteristic) and under the standard AM 1.5 simulated illumination. The performance of the devices wastested on cells having not optimised 14 lines per cm top contact grid. The basic parameters were calculatedfrom the measured characteristics in the dark and under the light and their values with regard to the devicestructure discussed.