ALTERNATIVE ZnO WINDOW LAYER DEPOSITION PROSESSES AND THEIR EFFECTS ONCd-FREE CIGS THIN FILM SOLAR CELL PERFORMANCE

摘要

Damage-reduced deposition process of ZnO window layer is desirable for improving junctionproperties and cell performance of CIGS thin film solar cells fabricated using ZnS(O,OH) buffer layers. We thushave investigated alternative processes for ZnO window layers such as reactive plasma deposition (RPD) andmetal-organic chemical vapor deposition (MOCVD) processes. As a result, It was found that the RPD methodhas several advantages over other two methods. The cell performance significantly improved by usingRPD-ZnO:Ga window layer due to the increased fill factor. Another advantage of RPD method was that fairlyhigh deposition rate (only one minute for 200 nm-thick) was achieved together with low plasma damage.