Investigation of Resist Cracking and Adhesion Improvement

摘要

Hhe resist cracking phenomenon in hole pattern on TEOS oxide has been investigated widely. We found from various tests that the root cause is just poor adhesion between resist and TEOS oxide and better adhesion process can skip additional process like a plasma treatment to avoid resist cracking. In this work, we show the relations between adhesion and prime process and finally suggest the way to improve adhesion, which will be more critical to lithography process below 130nm because of easier pattern collapse due to high aspect ratio and narrow width.