Zep process optimization for sub-micron reticle fabrication in high acceleration voltage writing tool

摘要

In e-beam lithography for high-end reticle fabrication, process capability of higher resolution and cd accuracy are needed more to solve tighter specification. In order to overcome this serious problem, various items including high acceleration voltage e-beam tool and good durability of dry etching resist such as ZEP-7000, CAR are recommended. Therefore basically the process on high acceleration voltage strategy is changing from wet etching to dry etching which must be established and optimized condition with develop. The high acceleration voltage e-beam tool has a high accuracy and high-throughput, high speed PEC correction system with variable shaped e-beam but the condition of writing must be optimized to make best performance including hardware circuits . There are so many parameters to get the cd performance on ZEP -7000 resist & vector scan high voltage writing tool, so mask manufacturer has to consider optimized parameter of them. In this work, we evaluated some barrier to make advanced reticle using high acceleration voltage writing tool related on PEC application with ZEP resist process optimization.