A Model Based OPC Methodology for 0.13 Micron Technology

摘要

As we move towards smaller dimensions and denser circuits, Model Based OPC has become a critical and indispensable tool to achieve feature fidelity for random logic and very small bitcell patterns. Model-Based OPC is used to overcome the effects due to the reticle manufacturing process and the photolithography process which are essentially low pass filters, with the objective of returning the intended drawn feature on wafer within acceptable error. In this paper we demonstrate its capabilities and flexibility with the development of a mixed Model-based/Rule based OPC approach that covers all categories of features for the active layer and the heuristics that justify this approach. We discuss along with experimental results the parameterized variations that are possible with Model Based OPC (MBOPC) and the optimization required as a result within the paradigm of a 248nm-lithography process for the 0.13-micron technology. Data and manufactureability issues are discussed that are an important consideration for a feasible MBOPC solution.