A leap ahead in mask data processing for technology nodes below 130nm

摘要

To process 0.13 μm designs and below, a new data processing flow has been implemented at STMicroelectronics Crolles based on the Mentor Graphics software suite. To deal more easily with model-based corrections (OPC) and additional verifications (DRC) on critical layers a separation of the design database in critical and non-critical layers has been introduced. The resist model and the correction parameters are developed in an iterative way. File sizes and data processing time are the main issues in the mask data preparation. The impact on mask manufacturing has been also illustrated in this paper.