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Explicit gate delay model for timing evaluation

机译:用于时序评估的显式门延迟模型

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Delay evaluation is always a crucial concern in the VLSI design and it becomes increasingly more critical in the nowadays deep-submicron technology. To obtain an accurate delay value, the gate modeling is a key issue. As the VLSI feature size scaling down and meanwhile operating frequency increasing, the modeling work becomes more difficult than ever for high-performance digital ICs. Nevertheless, most conventional techniques of gate modeling are based on the switch-resistor model;(i.e., a voltage source concatenating a driving resistance), which can only capture the gate characteristic in its switching region. Hence, these modeling techniques have to decouple the gate with its interconnects and compute a piecewise linear function for the driving source in the iterative computation of effective capacitance [1, 3, 4]. Since the driving source of the model is dependent on gate load, when the design modification affects the load, the gate has to be modeled again almost from the beginning for a new timing analysis. The efficiency will be deteriorated in synthesis loops due to this. In this paper, we present an explicit gate delay model, which is not sensitive to gate load and can be pre-computed before timing analysis and synthesis. Thus, the repetition of modeling work is totally unnecessary even when the gate load keeps on changing in the performance optimization procedure. The efficiency is certainly improved in the synthesis/optimization loops. The advantage is attributed to using a second-order circuit as the model base. This two-pole approach also certifies the model to yield an accurate result to match the non-linear output of gate.
机译:延迟评估一直是VLSI设计中的关键问题,在当今的深亚微米技术中,延迟评估变得越来越重要。为了获得准确的延迟值,门控建模是关键问题。随着VLSI功能尺寸的缩小和工作频率的增加,高性能数字IC的建模工作变得比以往更加困难。尽管如此,大多数传统的栅极建模技术都是基于开关电阻器模型(即连接驱动电阻的电压源),它只能捕获其开关区域中的栅极特性。因此,这些建模技术必须在迭代计算有效电容[1、3、4]时,将栅极与其互连相互分离,并为驱动源计算分段线性函数。由于模型的驱动源取决于门极负载,因此当设计修改影响负载时,必须几乎从一开始就重新对门极进行建模,以进行新的时序分析。因此,合成循环中的效率将降低。在本文中,我们提出了一个显式的栅极延迟模型,该模型对栅极负载不敏感,可以在时序分析和合成之前进行预先计算。因此,即使栅极负载在性能优化过程中不断变化,也完全不需要重复建模工作。在综合/优化循环中,效率肯定得到了提高。该优点归因于使用二阶电路作为模型库。这种两极方法还证明了该模型能够产生准确的结果,以匹配门的非线性输出。

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