首页> 外文会议>Seventeenth European Photovoltaic Solar Energy Conference >CONTACT RESISTIVITY AT GRTOLINE/ITO INTERFACE IN LAMINATED GRID CELL DETERMINED BY ISCRA METHOD
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CONTACT RESISTIVITY AT GRTOLINE/ITO INTERFACE IN LAMINATED GRID CELL DETERMINED BY ISCRA METHOD

机译:用ISCRA法测定层状网格细胞的层间/ ITO界面接触电阻率。

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Standard TLM method is corrected with allowance made for the influence of finger's longitudinal resistance and also for the influence of fingers located between the measuring fingers. It is shown that the contact resistivity measured without regard for the above-mentioned factors can be underestimated as well as overestimated as much as even order of magnitude. ISCRA method for contact resistivity measuring is developed, which compared even with corrected TLM method allows to determine the contact resistivity for each finger. Contact resistivity at Gridline/ITO interface in Laminated Grid solar cell obtained by ISCRA method is less than 0,8 mΩ·cm~2, about an order of magnitude better compared with contact resistivity in screen-printed cells. This result leads to series resistance of less than 0,6Ω·cm~2 and ~3% shadow area of metallisation in full size bifacial Laminated Grid solar cells with high-efficiency emitter (~150Ω/□), or two times better than in screen-printed cells.
机译:对标准的TLM方法进行了校正,但要考虑到手指的纵向阻力的影响以及位于测量手指之间的手指的影响。结果表明,不考虑上述因素而测得的接触电阻率可能被低估,甚至被高估了甚至几个数量级。开发了用于接触电阻率测量的ISCRA方法,即使与校正的TLM方法相比,该方法也可以确定每个手指的接触电阻率。通过ISCRA方法获得的叠层网格太阳能电池的Gridline / ITO界面接触电阻率小于0.8mΩ·cm〜2,比丝网印刷电池的接触电阻率好一个数量级。该结果导致在具有高效发射器(〜150Ω/□)的全尺寸双面层压网格太阳能电池中,串联电阻小于0.6Ω·cm〜2,且金属化的阴影面积约为〜3%,或比串联电阻高两倍。丝网印刷的单元格。

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