Chemical Mechanical Polishing of Copper-CVD Low Κ Films: A Comparison of Selective and Non-selective Processes

摘要

Production worthy Chemical Mechanical Polishing (CMP) process has been developed on a multi-platen rotary polisher using CVD low κ films, such as Black Diamond~(TM) Low κ films (BD). Several different formulations of copper polishing slurries including selective and non-selective slurries were used in the development work. The relative merits of these processes with respect to copper dishing and low κ film erosion are discussed. Manufacturability of the process is proven by demonstrating multi-layer low κ polish without film damage and by achieving very high parametric yields. The importance of edge engineering in copper-low κ materials integration is discussed. The CMP process for copper-low κ films is compared with that of a copper-oxide process.