Impact of the Geometry on the Noise Properties of the 6H-SiC Diodes

摘要

The noise properties of 6H-SiC ion implanted p-n diodes have been investigated. The noise measurements were performed at room temperature under forward bias and frequency range from 10 to 100 kHz. The studied diodes have three different areas A_1, A_2, and A_3, ( with A_1 < A_2 < A_3). The effect of the geometry on the noise properties of these junctions was found to be depending on the origin of the noise at low and high current densities. Two different noise behaviours have been observed, and two relationships between the noise spectral density S_I (f) and the area (A) have been found to describe the noise behaviour observed in these junctions.