Copper cluster formation and evolution in amorphous materials grown by co-sputtering of copper with SiO2

摘要

Abstract: The process of copper nanoclusters evolution inamorphous films, formed by co-sputtering of Cu andSiO$-2$/, has been investigated theoretically. Bulkcopper diffusion during sample annealing afterfabrication have been described by kinetic equation setand cluster size distribution function have beenobtained. The reasonable agreement of theoretical andexperimental results has been achieved. The values ofbulk copper activation migration energy have beenestimated. For investigating clusters formation withdifferent copper content method of molecular dynamicshave been developed. Both methods have reasonableagreement for low time diffusion.!3