Silicon Carbide Schottky Diodes for Alpha Particle Detection

摘要

The fabrication and characterization of SiC Schottky diodes for the detection of alpha particles at room temperature are described. A 5 x 5 matrix of diodes has been fabricated in order to verify the dependence of the device response on randomly distributed wafer defects. A dedicated exposure apparatus has been fabricated to test the detectors. Some preliminary alpha energy spectra obtained with the lowest reverse current diodes are shown.