Studies of the Ambient Dependent Inversion Capacitance of Catalytic Metal - Oxide - Silicon Carbide Devices Based on 6H- and 4H-SiC Material

摘要

Platinum - oxide - silicon carbide structures change their capacitance upon gas exposure and are used as gas sensors. The decrease of the inversion capacitance within 750 to 900 deg C due to hydrogen exposure is studied for 4H- and 6H-SiC, both n- and p-type. A mechanism for the capacitance decrease is suggested which explains also the large change in the conductance of the structures.