Modification of Peierls-Nabarro Mechanism of Dislocation Motion by A Random Field of internal Microstresses

摘要

The effect of a disturbed crystal structure on the plasticity of such materials as BCC metals, intermetallics, covalent semiconductors, etc., possessing a high Peierls-Nabarro relief, is simulated by introducing a random field of internal stresses. The statistical scatter in the kinetic characteristics of elementary events of dislocation motion dictates the use of hte probabilistic description instead of the conventional theory based on the kink mechanism. In such approach distribution functions of kink formation and migration times are used for a calculation of the dislocation mobility. Modified activation parameters characterising the plasticity of nonideal materials are found.