The (Ba_0.5Sr_0.5)TiO_3 thin films prepared by excimer laser method for dynamic random access memory

摘要

(Ba_0.5Sr_0.5)TiO_3 (BST) thin films have been deposited on Si(100) substrates by excimer laser (308 nm) ablation at 600 deg C, the thickness of BST films is 400nm. The Capacitance-voltage characteristics and current-voltage characteristics of the BST films were studied. The dielectric constant of BST films is 300, and the dissipation factor is 0.015 at 1 MHz. The leakage current density is 2x10~-9 A/cm~2 at 2V. The charge storage density is 35fC/um m~2 at an applied electric field of 0.125MV/cm.