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Study and mechanism analysis of photochemical oxidation for n-type mercury cadmium tellurium photoconductance detectors

机译:n型汞镉碲光电导检测器光化学氧化的研究与机理分析

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摘要

Instead of anodization, photochemical oxidation is used to perform the surface passivation of n-type mercury cadmium tellurium (HgCdTe) photoconductance detectors for the first time. X-ray photoelectron spectroscopy (XPS) is used to analyze the influence of the oxidation condition on the oxidation eaction. The passivation mechanism of photochemical oxidation is also studied. Comparing of the performances of the two kinds of detectors with each other, which were prepared under the same technique conditions by the anodization and teh photochemical oxidation respectively, it shows that the results of photochemical oxidation is slightly superior to that of anodic oxidation.
机译:代替阳极氧化,光化学氧化首次用于n型汞镉碲(HgCdTe)光电导检测器的表面钝化。 X射线光电子能谱(XPS)用于分析氧化条件对氧化反应的影响。还研究了光化学氧化的钝化机理。比较两种在相同技术条件下分别通过阳极氧化和光化学氧化制备的检测器的性能,结果表明,光化学氧化的结果略好于阳极氧化的结果。

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