n unified model to characterize the strong inversion high-frequency capacitance in this oxide MOS structures under fowler-nordheim funneling injection condition

摘要

A detailed analysis of the strong inversion high frequency capacitance under th Fowler-Nordheim (F-N) tunneling injection is of great relevance for the modeling and characterization of the thin oxide MOS devices and full exploration of the capabilities of floating gate E~2prom. We found that the F-N current strongly affects the transient capacitance in the thin oxide MOS structures and has different behavior in NMOSC and PMOSC. The quasi-equilibrium capacitance decrease for PMOSC and increase for NMOS-C with increasing F-N current.