PREPARATION AND CHARACTERIZATION OF Bi_2VO_(5.5) FILMS BY MOD METHOD

摘要

We report the preparation and characterization of Bi_2VO_(5.5)(BVO) films grown on SrTiO_3, Pt/SiO_2/Si, and n-Si(100) substrates by the MOD technique. Since a dielectric constant of BVO is much lower than that of PZT or SBT, BVO is one of the promising candidates for metal-ferroelectric-semiconductor field-effect transistors (MFSFETs). It is found by X-ray diffraction (XRD) measurements that highly (001)-oriented BVO films were obtained and that the crystalline quality was improved with increasing the annealing temperature. The full width at half maximum (FWHM) in the X-ray rocking curve measurements for BVO films on SrTiO_3, Pt/SiO_2/Si, and n-Si(100) substrates are 0.6°, 1.0°, and 5.1°, respectively. Electrical properties were measured with Pt top electrodes and the typical relative dielectric constant determined by the C-V characteristics is 60-80.