This study proposes an improvement of the free vibrating beam method allowing characterization of the d_(31) coefficients of piezoelectric thin films. Preparation and piezoelectric characterization of PZT thin films are shown. An analytical model of the beam and the thin film is developed. Finite element modeling allows for definition of the validity conditions of the model. A numerical fitting of the model to the experimental values exhibits an excellent overlap. We obtain d_(31) values from 10 pC/N to 14 pC/N. Advantages of this method are shown compared to the first maximum voltage method.
展开▼
机译：该研究提出了改进的自由振动光束方法，允许压电薄膜的D_（31）系数的表征。显示了PZT薄膜的制备和压电表征。开发了梁和薄膜的分析模型。有限元建模允许定义模型的有效条件。模型对实验值的数值拟合表现出优异的重叠。我们获取10 pc / n至14 pc / n的d_（31）值。与第一最大电压法相比，示出了该方法的优点。
展开▼
