首页> 外文会议>Symposium on ferroelectric thin films >CRYSTAL STRUCTURES OF SrBi_2Ta_2O_9 AND Sr_(0.8)Bi_(2.2)Ta_2O_9 FERROELECTRIC MATERIALS
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CRYSTAL STRUCTURES OF SrBi_2Ta_2O_9 AND Sr_(0.8)Bi_(2.2)Ta_2O_9 FERROELECTRIC MATERIALS

机译:SRBI_2TA_2O_9和SR_(0.8)BI_(2.2)TA_2O_9铁电材料的晶体结构

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摘要

Structural and ferroelectric properties of stoichiometric SrBi_2Ta_2O_9 and Sr-deficient-and-Bi-excess Sr_(0.8)Bi_(2.2)Ta_2O_9 bulk ceramics materials are studied. The ferroelectric Curie temperatures for SrBi_2Ta_2O_9 and Sr_(0.8)Bi_(2.2)Ta_2O_9 are 300 and 400°C, respectively. Structure analysis by neutron powder diffraction reveals that Bi_2O_2 layer and TaO_6 octahedra are considerably distorted and that atomic displacement along the a-axis causes ferroelectric spontaneous polarization. In Sr_(0.8)Bi_(2.2)Ta_2O_9, both Bi-substitution and cation-vacancies exist at the Sr-site. The calculated polarization of Sr_(0.8)Bi_(2.2)Ta_2O_9 is higher than that of the stoichiometric sample, which is consistent with observations of remanent polarization in thin-film capacitors. The Bi-substitution and the cation-vacancies at the Sr site enhance structural distortion in the TaO_6 octahedron and lead to the higher Curie temperature and the higher ferroelectric spontaneous polarization.
机译:研究了化学计量的结构和铁电性能,研究了SRBI_2TA_2O_9和SR缺乏 - 和-BI过量SR_(0.8)BI_(2.2)TA_2O_9块状陶瓷材料。 SRBI_2TA_2O_9和SR_(0.8)BI_(2.2)TA_2O_9的铁电居里温度分别为300和400°C。中子粉末衍射结构分析表明,Bi_2O_2层和Tao_6八面体的结构显着变形,并且沿着A轴的原子位移导致铁电自发极化。在SR_(0.8)BI_(2.2)TA_2O_9中,SR位点存在双替代和阳离子空缺。计算的SR_(0.8)Bi_(2.2)Ta_2O_9的计算极化高于化学计量样品的偏振,这与薄膜电容器中的再现极化的观察一致。双替代和SR位点的阳离子障碍增强了Tao_6八面体中的结构变形,并导致居里温度较高,铁电自发极化较高。

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